CV and published papers

ALEXANDER A. UKHANOV

801 University S.E.,  Suite 100                                                                  (505) 797-8905

Albuquerque, NM 87106                                                                aukhanov@actoprobe.com

SUMMARY OF QUALIFICATIONS

Scientist and engineer with extensive background in optoelectronic materials and devices such as diode lasers and photo detectors.

Innovative problem solver with solid experience in optics, laser physics, solid state electronics, clean room processing  and molecular beam epitaxial (MBE) growth .

Highly ethical team member with solid leadership and communication skills.

Successfully managed a project  with diode laser design, MBE growth, clean room processing of a laser structure, electrical and optical characterization, modeling diode laser characteristics to focus on developing novel diode lasers.

PROFESSIONAL EXPERIENCE

ACTOPROBE LLC, Albuquerque, NM                                                                  1/2008 –

Managing  Director

Built up ACTOPROBE LLC

  • Successfully developed IP:
    1) Optical probe based on submicron size laser and detector for conventional Atomic Force Microscopy (AFM). This probe decreases cost of near-field optical microscopy in 1000 times, makes it more efficient and user friendly. US patent is pending.
    2) Optical microscopy – spectroscopy instrument for AFM. This instrument does optical spectroscopy/microscopy on single molecular scale and decreases cost of this technique in 50 times.
  • Prepared and submitted a number of Small Business Innovation Research Grants (SBIR)
  • Developed new products and marketing strategy  for the company.

Micron Technology, Inc., Imaging Group, Boise, ID                                               1/2007 – 1/2008

Characterization Engineer

Responsible for  two projects: 1) optical characterization of CMOS sensors and wafer level optics (mini-lens) for CMOS sensors and 2) clean room fabrication of Si master template for mini-lens  (for Imprint Lithography)  applying resist reflow method and dry etching

  • Successfully developed a method for fabricating aspherical lens shapes using resist reflow techniques which can be applied for mini-lens and micro-lens fabrication. A US patent was filed.
  • Designed and assembled optical system for measurement modulation transfer function (MTF) of mini-lens and CMOS sensors based on inverted optical microscope. US patent was filed.

Teledyne Scientific & Imaging (Rockwell Scientific Company) Camarillo, CA        6/2006-1/2007

Research Scientist, Imaging Division

Molecular Beam Epitaxy HgCdTe Growth Engineer

  • Learned how to grow and grew materials (HgCdTe p-n Photodiode) used in military and space applications.
  • Optical and electrical characterization of the HgCdTe p-n Photodiode structures and optimization 2-color HgCdTe  growth structures to maximize sensor MTF. MBE growth defect study using optical and electron microscopy.

Naval Research Laboratory, Washington, DC                                                                       5/2004-5/2006

NRC Research Associate, Electronics Science And Technology Division

Developed Quantum Dot (QD) and Quantum Dash (Q.Dash) nanomaterials for diode lasers and   Quantum Information using solid source molecular beam epitaxy (MBE)  and in situ AsBr3 etching system.

  • Developed  novel self-assembled unstrained In0.53Ga0.47As  Quantum dashes applying  MBE and in situ AsBr3 etching system.
  • Fabricated new self –assembled nanostructures in the form of cavities on GaSb using MBE and in situ AsBr3 etching system.
  • Developed technique for low density(< 108 cm-2) InAs Quantum dot growth on GaAs.

 

University of New Mexico, Albuquerque, NM                                                           6/1997-4/2004

Graduate Student Research Assistant, Center for High Technology Materials

Doctoral dissertation involved clean room fabrication and characterization of ridge waveguide quantum dot lasers, MBE growth of quantum wells and self-organized quantum dot laser structures.

  • Measurement of material carrier induced refractive index and spectral dependence of the linewidth enhancement factor in quantum dash and quantum dot lasers for the first time.
  • Demonstration of more than two fold decrease in linewidth enhancement factor of the quantum dot in a well laser diodes by engineering quantum dot shape and composition of the surrounding quantum well.
  • Measurement of  anisotropy of the carrier induced index of refraction and gain in quantum dash nanostructures and its dependence on photon energy for the first time

EDUCATION

◊   Ph.D.  Physics (Optical Science and Engineering), University of New Mexico, Albuquerque, NM, February 2004, G.P.A.: 3.66.

◊   Master of Science in Electrical Engineering, Moscow Institute of Radio-Engineering  Electronics and Automation, Moscow, Russia G.P.A.: 3.88.

AWARDS AND GRANTS

◊   National Research Council Research Associateship Award (US National Academies), US Naval Research Laboratory, Washington, DC (May 2004)

◊   University of New Mexico Scholarship, University of New Mexico, Albuquerque (January 2004)

COMPUTER SKILLS

Matlab; Mathcad; LabVIEW; Turbo Pascal; ZEMAX; dw-2000; Microsoft Professional Package

ADDITIONAL SKILLS

Fluent in Russian language and  speak basic Spanish.

SELECTED PUBLICATIONS

A. A. Ukhanov, A. S. Bracker, G. I. Boishin,  J. C. Culbertson, “Multistep fabrication of self-assembled unstrained quantum dashes ” Journal Vacuum Science and Technology B, 24(3), 1577 (2006).

A. A. Ukhanov, A. Stintz, P. G. Eliseev and K. J. Malloy, “Comparison of the carrier induced refractive index, gain and a-factor in quantum dot and quantum well lasers” , Appl.Phys. Lett., 84, 1058 (2004).

A. A. Ukhanov, R. H. Wang, T. J. Rotter, A. Stintz, L. F. Lester, P. G. Eliseev and K. J. Malloy, “Orientation dependence of the optical properties in InAs quantum-dash lasers on InP”,  Appl. Phys.Lett., 81, 981 (2002).

A. A. Ukhanov, V.P. Tychinskii, “Quantitative characteristics of polarization images”, Biomedical Engineering, 30, 186, (1996).

 

 

 

US citizen